■ 제품필수정보

제조사	Infineon
제조사품명	IRFU120NPBF
간략설명	N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK Infineon IRFU120NPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9.4 A Maximum Drain Source Voltage = 100 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 210 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 48 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +175 °C
높이 = 6.1mm N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.