■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
IRFD210PBF |
| 간략설명 |
N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay IRFD210PBF |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 600 mA Maximum Drain Source Voltage = 200 V
패키지 = HVMDIP
장착형태 = Through Hole
핀수 = 4 Maximum Drain Source Resistance = 1.5 Ω Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 1 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 6.29mm
높이 = 3.37mm N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
