■ 제품필수정보

제조사	ROHM
제조사품명	R6520KNX1C10
간략설명	N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220AB ROHM R6520KNX1C10

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 20 A Maximum Drain Source Voltage = 650 V
패키지 = TO-220AB
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 200 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 220 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 4.7mm
높이 = 16.3mm R6520KNX1 is Low on-resistance and ultra fast switching speed Power MOSFET.Low on-resistance. Ultra fast switching speed. Parallel use is easy. Pb-free lead plating