■ 제품필수정보

제조사	Microchip
제조사품명	DN2625K4-G
간략설명	N-Channel MOSFET, 1.1 A, 250 V Depletion, 3-Pin DPAK Microchip DN2625K4-G

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 1.1 A Maximum Drain Source Voltage = 250 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 3.5 Ω Channel Mode = Depletion Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Width = 6.1mm
높이 = 2.29mm DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Additional Features: Very low gate threshold voltage Designed to be source-driven Low switching losses Low effective output capacitance Designed for inductive loads Well matched for low second harmonic when driven by MD2130