■ 제품필수정보

제조사	OSI Optoelectronics
제조사품명	PIN-RD100
간략설명	OSI Optoelectronics, PIN-RD100 Visible Light Si Photodiode, Through Hole Ceramic

■ 제품사양

Spectrums Detected = Visible Light Wavelength of Peak Sensitivity = 950nm
패키지 = Ceramic
장착형태 = Through Hole Number of Pins = 2 Diode Material = Si Minimum Wavelength Detected = 350nm Maximum Wavelength Detected = 1100nm Length = 16.51mm Width = 14.986mm
높이 = 2.032mm Peak Photo Sensitivity = 0.6A/W Typical Rise Time = 40ns These Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. These Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions.Product Applications Laser Applications Control Systems Electron Detection High Energy Physics Medical Instrumentation Product Features Large Active Area Fully Depleteable Fast Response Ultra Low Dark Current