■ 제품필수정보

제조사	Onsemi
제조사품명	NTMFS6H800NT1G
간략설명	N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN onsemi NTMFS6H800NT1G

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 203 A Maximum Drain Source Voltage = 80 V
패키지 = DFN
장착형태 = Surface Mount
핀수 = 5 Maximum Drain Source Resistance = 3.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 200 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 5.1mm Forward Diode Voltage = 1.2V ON Semiconductor MOSFETThe ON Semiconductor DFN5 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 2.1mohm at a gate-source voltage of 10V. It has continuous drain current of 203A and maximum power dissipation of 200W. The minimum and a maximum driving voltage for this transistor are 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.Features and Benefits??Compact design ??Lead (Pb) free ??Low QG and capacitance ??Low QG and capacitance to minimize driver losses ??Low RDS (on) to minimize conduction losses ??Minimize conduction losses ??Minimize driver losses ??Operating temperature ranges between -55°C and 175°C ??Small footprint (5x6 mm)Applications??48V systems ??DC/DC converter ??Load switch ??Motor control ??Power switches (high side driver, low side driver, H-bridges etc.) ??Switching power supplies ??Synchronous rectifierCertifications??ANSI/ESD S20.20:2014 ??BS EN 61340-5-1:2007