■ 제품필수정보

제조사	Onsemi
제조사품명	NTHL082N65S3F
간략설명	N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 onsemi NTHL082N65S3F

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 40 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 82 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 313 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 4.82mm Forward Diode Voltage = 1.3V SuperFET® III MOSFET is ON Semiconductor??s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFET??s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.700 V @ TJ = 150 °C Higher system reliability at low temperature operation Ultra Low Gate Charge (Typ. Qg = 81 nC) Lower switching loss Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF) Lower switching loss Excellent body diode performance (low Qrr, robust body diode) Higher system reliability in LLC and Phase shift full bridge circuit Optimized Capacitance Lower peak Vds and lower Vgs oscillation Typ. RDS(on) = 70 mΩ Applications Telecommunication Cloud system Industrial Telecom power Server power EV charger Solar / UPS