■ 제품필수정보

제조사	ROHM
제조사품명	R6004ENX
간략설명	N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FM ROHM R6004ENX

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220FM
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 1.36 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 40 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Length = 10.3mm Forward Diode Voltage = 1.5V Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.Low on-resistance. Fast switching speed. Gate-source voltage (VGSS) guaranteed to be ±20V. Drive circuits can be simple. Parallel use is easy. Pb-free lead plating