■ 제품필수정보

제조사	Toshiba
제조사품명	TK65G10N1
간략설명	N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK Toshiba TK65G10N1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 136 A Maximum Drain Source Voltage = 100 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 4.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 156 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.2V