■ 제품필수정보

제조사	Vishay
제조사품명	SQJ412EP-T1_GE3
간략설명	N-Channel MOSFET, 32 A, 40 V, 4-Pin PowerPAK SO-8L Vishay SQJ412EP-T1_GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 32 A Maximum Drain Source Voltage = 40 V
패키지 = PowerPAK SO-8L
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 8.5 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 83 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 5.03mm
높이 = 1.14mm AEC-Q101. N-Channel MOSFET, Automotive SQ Rugged
시리즈, Vishay Semiconductor. The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability. Advantages of SQ Rugged
시리즈 MOSFETs. AEC-Q101 qualified Junction temperature up to +175°C Low on-resistance n- and p-channel TrenchFET® technologies Innovative space-saving package options