■ 제품필수정보

제조사	Vishay
제조사품명	SQ4920EY-T1_GE3
간략설명	Dual N-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Vishay SQ4920EY-T1_GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 8 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 17.5 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 4.4 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V Width = 4mm
높이 = 1.5mm Dual N-Channel MOSFET, Vishay Semiconductor