■ 제품필수정보

제조사	Nexperia
제조사품명	BUK9Y59-60E,115
간략설명	N-Channel MOSFET, 16.7 A, 60 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y59-60E,115

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 16.7 A Maximum Drain Source Voltage = 60 V
패키지 = LFPAK, SOT-669
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 133 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.45V Minimum Gate Threshold Voltage = 0.5V Maximum Power Dissipation = 37 W Transistor Configuration = Single Maximum Gate Source Voltage = 10 V Width = 4.1mm
시리즈 = BUK9Y59 From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate controlLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed for use in high performance automotive applications.Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching