■ 제품필수정보

제조사	Nexperia
제조사품명	BUK9Y19-55B,115
간략설명	N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y19-55B,115

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 184 A Maximum Drain Source Voltage = 55 V
패키지 = LFPAK, SOT-669
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 40 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.3V Minimum Gate Threshold Voltage = 0.5V Maximum Power Dissipation = 85 W Transistor Configuration = Single Maximum Gate Source Voltage = 15 V Typical Gate Charge @ Vgs = 18 nC @ 5 V
높이 = 1.05mm From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate controlLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids