■ 제품필수정보

제조사	Nexperia
제조사품명	BUK7610-55AL,118
간략설명	N-Channel MOSFET, 122 A, 55 V, 3-Pin D2PAK Nexperia BUK7610-55AL,118

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 122 A Maximum Drain Source Voltage = 55 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 20 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.4V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 300 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Width = 11mm
높이 = 4.5mm From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate controlStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.Suitable for thermally demanding environments due to 175 °C rating Suitable for use in control systems due to stable operation in linear mode 12 V and 24 V loads Automotive systems DC motor control Repetitive clamped inductive switching