■ 제품필수정보

제조사	Nexperia
제조사품명	PMV16XNR
간략설명	N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 Nexperia PMV16XNR

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 8.6 A Maximum Drain Source Voltage = 20 V
패키지 = TO-236
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 33 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 0.9V Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 6.94 W Transistor Configuration = Single Maximum Gate Source Voltage = 12 V Width = 1.4mm
높이 = 1mm Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1200 mW Target applications LED driver Power management Low-side load switch Switching circuits