■ 제품필수정보

제조사	Infineon
제조사품명	IRFL4310TRPBF
간략설명	N-Channel MOSFET, 2.2 A, 100 V, 3 + Tab-Pin SOT-223 Infineon IRFL4310TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 2.2 A Maximum Drain Source Voltage = 100 V
패키지 = SOT-223
장착형태 = Surface Mount
핀수 = 3 + Tab Maximum Drain Source Resistance = 200 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 2.1 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.3V Dual N-Channel Power MOSFET, Infineon. Infineon ??s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.