■ 제품필수정보
| 제조사 |
Infineon |
| 제조사품명 |
BSC12DN20NS3GATMA1 |
| 간략설명 |
N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 11.3 A Maximum Drain Source Voltage = 200 V
패키지 = TDSON
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 125 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 50 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Width = 6.35mm
높이 = 1.1mm
