■ 제품필수정보

제조사	Infineon
제조사품명	IPD25CN10NGATMA1
간략설명	N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 100 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 26 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 71 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Width = 7.47mm
높이 = 2.41mm Infineon OptiMOS?? Power MOSFET Family. Infineon ??s OptiMOS?? N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.