■ 제품필수정보

제조사	Infineon
제조사품명	BFP840FESDH6327XTSA1
간략설명	Infineon BFP840FESDH6327XTSA1 NPN Transistor, 35 mA, 2.25 V, 4-Pin TSFP

■ 제품사양

Transistor
타입 = NPN Maximum DC Collector Current = 35 mA Maximum Collector Emitter Voltage = 2.25 V
패키지 = TSFP
장착형태 = Surface Mount Maximum Power Dissipation = 75 mW Transistor Configuration = Single Maximum Collector Base Voltage = 2.9 V Maximum Operating Frequency = 85 GHz
핀수 = 4
칩당 요소 수 = 1
크기 = 1.4 x 0.8 x 0.55mm The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat package with visible leadsRobust high performance low noise amplifier based on Infineons reliable, high volume SiGe:C wafer technology 2 kV ESD robustness (HBM) due to integrated protection circuits High maximum RF input power of 21 dBm 0.6 dB minimum noise 26 dB maximum gain 23.5 dBm OIP3 typical at 5.5 GHz, 25 mA Accurate SPICE GP model available to enable effective design in process