Channel 타입 = N Maximum Continuous Drain Current = 1.33 A Maximum Drain Source Voltage = 20 V 패키지 = SOT-563 장착형태 = Surface Mount 핀수 = 6 Maximum Drain Source Resistance = 1.5 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 0.9V Maximum Power Dissipation = 530 mW Transistor Configuration = Isolated Maximum Gate Source Voltage = -12 V, +12 V Width = 1.25mm 높이 = 0.6mm Dual N-Channel MOSFET, Diodes Inc.