■ 제품필수정보

제조사	STMicroelectronics
제조사품명	SCT30N120
간략설명	N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 1200 V
패키지 = HiP247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 100 mΩ Channel Mode = Enhancement Maximum Power Dissipation = 270 W Transistor Configuration = Single Maximum Gate Source Voltage = -10 V, +25 V Width = 5.15mm
높이 = 20.15mm N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics. Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.