■ 제품필수정보

제조사	Toshiba
제조사품명	TK58A06N1,S4X(S
간략설명	N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS Toshiba TK58A06N1,S4X(S

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 58 A Maximum Drain Source Voltage = 60 V
패키지 = TO-220SIS
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 5.4 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Maximum Power Dissipation = 35 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 46 nC @ 10 V
높이 = 15mm MOSFET N-Channel, TK4, TK5
시리즈, Toshiba