■ 제품필수정보

제조사	Infineon
제조사품명	IRF7389TRPBF
간략설명	Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC Infineon IRF7389TRPBF

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 5.3 A, 7.3 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 46 mΩ, 98 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2.5 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 22 nC @ 10 V, 23 nC @ 10 V
시리즈 = HEXFET Dual N/P-Channel Power MOSFET, Infineon. Infineon ??s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.