■ 제품필수정보

제조사	IXYS
제조사품명	IXFN132N50P3
간략설명	N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXYS IXFN132N50P3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 112 A Maximum Drain Source Voltage = 500 V
패키지 = SOT-227
장착형태 = Screw Mount
핀수 = 4 Maximum Drain Source Resistance = 39 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Maximum Power Dissipation = 1.5 kW Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
최대 작동 온도 = +150 °C
높이 = 9.6mm N-channel Power MOSFET, IXYS HiperFET??Polar3??
시리즈. A range of IXYS Polar3??series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET??