■ 제품필수정보

제조사	IXYS
제조사품명	IXFB82N60Q3
간략설명	N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 82 A Maximum Drain Source Voltage = 600 V
패키지 = PLUS264
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 75 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 6.5V Maximum Power Dissipation = 1.56 kW Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Width = 5.31mm
시리즈 = HiperFET, Q3-Class N-channel Power MOSFET, IXYS HiperFET??Q3
시리즈. The IXYS Q3 class of HiperFET??Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density