■ 제품필수정보

제조사	IXYS
제조사품명	IXFN360N10T
간략설명	N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 360 A Maximum Drain Source Voltage = 100 V
패키지 = SOT-227
장착형태 = Screw Mount
핀수 = 4 Maximum Drain Source Resistance = 2.6 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 830 W Maximum Gate Source Voltage = -20 V, +20 V Width = 25.07mm
높이 = 9.6mm N-channel Power MOSFET, IXYS HiperFET??GigaMOS??
시리즈