■ 제품필수정보

제조사	IXYS
제조사품명	IXFN200N10P
간략설명	N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXYS IXFN200N10P

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 200 A Maximum Drain Source Voltage = 100 V
패키지 = SOT-227
장착형태 = Screw Mount
핀수 = 4 Maximum Drain Source Resistance = 7.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 680 W Maximum Gate Source Voltage = -20 V, +20 V Width = 25.07mm
높이 = 9.6mm N-channel Power MOSFET, IXYS HiperFET??Polar??
시리즈. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET?? from IXYS