■ 제품필수정보

제조사	ROHM
제조사품명	QS6M4TR
간략설명	Dual N/P-Channel MOSFET, 1.5 A, 20 V, 6-Pin TSMT-6 ROHM QS6M4TR

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 1.5 A Maximum Drain Source Voltage = 20 V
패키지 = TSMT-6
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 430 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 0.7V Maximum Power Dissipation = 1.25 W Maximum Gate Source Voltage = ±12 V Width = 1.8mm
높이 = 0.95mm