■ 제품필수정보

제조사	Onsemi
제조사품명	FQD5N60CTM
간략설명	N-Channel MOSFET, 2.8 A, 600 V, 3-Pin DPAK onsemi FQD5N60CTM

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 2.8 A Maximum Drain Source Voltage = 600 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 2.5 Ω Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 49 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
최대 작동 온도 = +150 °C
높이 = 2.39mm QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor ??s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.