■ 제품필수정보

제조사	Onsemi
제조사품명	FDME1024NZT
간략설명	Dual N-Channel MOSFET, 3.8 A, 20 V, 6-Pin MicroFET Thin onsemi FDME1024NZT

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 3.8 A Maximum Drain Source Voltage = 20 V
패키지 = MicroFET Thin
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 160 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 1.4 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -8 V, +8 V Width = 1.6mm
높이 = 0.5mm PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.