■ 제품필수정보

제조사	Infineon
제조사품명	IRF7509TRPBF
간략설명	Dual N/P-Channel MOSFET, 2 A, 2.7 A, 30 V, 8-Pin MSOP Infineon IRF7509TRPBF

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 2 A, 2.7 A Maximum Drain Source Voltage = 30 V
패키지 = MSOP
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 110 mΩ, 200 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 1.25 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +150 °C
높이 = 0.86mm Dual N/P-Channel Power MOSFET, Infineon. Infineon ??s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.