■ 제품필수정보

제조사	Nexperia
제조사품명	PMGD290XN,115
간략설명	Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 Nexperia PMGD290XN,115

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 860 mA Maximum Drain Source Voltage = 20 V
패키지 = SOT-363
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 350 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.5V Minimum Gate Threshold Voltage = 0.5V Maximum Power Dissipation = 410 mW Transistor Configuration = Isolated Maximum Gate Source Voltage = -12 V, +12 V
최대 작동 온도 = +150 °C
높이 = 1mm Dual N-Channel MOSFET, Nexperia