Channel 타입 = P Maximum Continuous Drain Current = 5.5 A Maximum Drain Source Voltage = 30 V 패키지 = SOIC 장착형태 = Surface Mount 핀수 = 8 Maximum Drain Source Resistance = 70 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2.1 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V 최대 작동 온도 = +150 °C 높이 = 1.5mm Dual P-Channel MOSFET, Diodes Inc.