■ 제품필수정보

제조사	Vishay
제조사품명	SIR418DP-T1-GE3
간략설명	N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SIR418DP-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 23 A Maximum Drain Source Voltage = 40 V
패키지 = PowerPAK SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 6 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.1V Maximum Power Dissipation = 39 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 1
최소 작동 온도 = -55 °C N-Channel MOSFET, 30V to 50V, Vishay Semiconductor