■ 제품필수정보

제조사	Vishay
제조사품명	SIB406EDK-T1-GE3
간략설명	N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 Vishay SIB406EDK-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 5.1 A Maximum Drain Source Voltage = 20 V
패키지 = SC-75
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 63 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.6V Maximum Power Dissipation = 10 W Transistor Configuration = Single Maximum Gate Source Voltage = -12 V, +12 V Width = 1.7mm
높이 = 0.8mm N-Channel MOSFET, 8V to 25V, Vishay Semiconductor