■ 제품필수정보

제조사	Vishay
제조사품명	SI1012CR-T1-GE3
간략설명	N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 630 mA Maximum Drain Source Voltage = 20 V
패키지 = SC-75
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.1 Ω Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 240 mW Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, +8 V Width = 0.86mm
높이 = 0.8mm N-Channel MOSFET, 8V to 25V, Vishay Semiconductor