■ 제품필수정보

제조사	Vishay
제조사품명	SI1308EDL-T1-GE3
간략설명	N-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-323 Vishay SI1308EDL-T1-GE3
문서자료	https://documents.rs-online.com/techlib:/itc_doclist_GB.htm?stockno=1657247

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 1.5 A Maximum Drain Source Voltage = 30 V
패키지 = SOT-323
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 185 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.6V Maximum Power Dissipation = 400 mW Transistor Configuration = Single Maximum Gate Source Voltage = -12 V, +12 V Width = 1.35mm
높이 = 1mm N-Channel MOSFET, 30V to 50V, Vishay Semiconductor