■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIHLR120TR-GE3 |
| 간략설명 |
N-Channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK Vishay SIHLR120TR-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 7.7 A Maximum Drain Source Voltage = 100 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 380 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 42 W Transistor Configuration = Single Maximum Gate Source Voltage = -10 V, +10 V Width = 6.22mm
높이 = 2.38mm N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
