■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIA517DJ-T1-GE3 |
| 간략설명 |
Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3 |
■ 제품사양
Channel
타입 = N, P Maximum Continuous Drain Current = 4.3 A, 4.5 A Maximum Drain Source Voltage = 12 V
패키지 = SOT-363
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 65 mΩ, 170 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 6.5 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -8 V, +8 V Width = 2.15mm
높이 = 0.8mm Dual N/P-Channel MOSFET, Vishay Semiconductor
