■ 제품필수정보
제조사 |
Vishay |
제조사품명 |
SIS468DN-T1-GE3 |
간략설명 |
N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SIS468DN-T1-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 80 V
패키지 = PowerPAK 1212-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 32 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 52 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +150 °C
높이 = 1.12mm N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor