■ 제품필수정보

제조사	Vishay
제조사품명	SI4554DY-T1-GE3
간략설명	Dual N/P-Channel MOSFET, 8 A, 40 V, 8-Pin SOIC Vishay SI4554DY-T1-GE3

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 8 A Maximum Drain Source Voltage = 40 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 27 mΩ, 34 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 3.2 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 13.3 nC @ 10 V, 41.5 nC @ 10 V
높이 = 1.5mm Dual N/P-Channel MOSFET, Vishay Semiconductor