■ 제품필수정보
제조사 |
Vishay |
제조사품명 |
SISS23DN-T1-GE3 |
간략설명 |
P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SISS23DN-T1-GE3 |
■ 제품사양
Channel
타입 = P Maximum Continuous Drain Current = 27 A Maximum Drain Source Voltage = 20 V
패키지 = PowerPAK 1212-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 11.5 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 57 W Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, +8 V
최대 작동 온도 = +150 °C
높이 = 0.78mm P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor