■ 제품필수정보

제조사	Infineon
제조사품명	BSZ086P03NS3EGATMA1
간략설명	P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 40 A Maximum Drain Source Voltage = 30 V
패키지 = TSDSON
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 13.4 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.9V Minimum Gate Threshold Voltage = 3.1V Maximum Power Dissipation = 69 W Transistor Configuration = Single Maximum Gate Source Voltage = -25 V, +25 V Width = 3.4mm
높이 = 1.1mm Infineon OptiMOS??P P-Channel Power MOSFETs. The Infineon OptiMOS ??P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS??P-Channel
시리즈: Temperature range from -55°C to +175°C