■ 제품필수정보

제조사	Infineon
제조사품명	BSZ110N06NS3GATMA1
간략설명	N-Channel MOSFET, 20 A, 60 V, 8-Pin TSDSON Infineon BSZ110N06NS3GATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 20 A Maximum Drain Source Voltage = 60 V
패키지 = TSDSON
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 11 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 50 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 25 nC @ 10 V
높이 = 1mm Infineon OptiMOS?? Power MOSFETs, 60 to 80V. OptiMOS??products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating