■ 제품필수정보

제조사	Infineon
제조사품명	IRF7105TRPBF
간략설명	Dual N/P-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 2.3 A, 3.5 A Maximum Drain Source Voltage = 25 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 160 mΩ, 400 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 10 nC @ 10 V, 9.4 nC @ 10 V
시리즈 = HEXFET Dual N/P-Channel Power MOSFET, Infineon. Infineon ??s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.