■ 제품필수정보

제조사	Infineon
제조사품명	BSS806NEH6327XTSA1
간략설명	N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Infineon BSS806NEH6327XTSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 2.3 A Maximum Drain Source Voltage = 20 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 82 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 0.75V Minimum Gate Threshold Voltage = 0.3V Maximum Power Dissipation = 500 mW Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, +8 V Width = 1.3mm
높이 = 1mm Infineon OptiMOS?? Power MOSFET Family. Infineon ??s OptiMOS?? N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.