■ 제품필수정보

제조사	Infineon
제조사품명	BSS223PWH6327XTSA1
간략설명	P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 310 mA Maximum Drain Source Voltage = 20 V
패키지 = SOT-323
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 2.1 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.2V Minimum Gate Threshold Voltage = 0.6V Maximum Power Dissipation = 250 mW Transistor Configuration = Single Maximum Gate Source Voltage = -12 V, +12 V
최대 작동 온도 = +150 °C
높이 = 0.8mm Infineon OptiMOS??P P-Channel Power MOSFETs. The Infineon OptiMOS ??P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS??P-Channel
시리즈: Temperature range from -55°C to +175°C