■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STPSC8065D
간략설명	STMicroelectronics 650V 8A, SiC Schottky Diode, 2-Pin TO-220AC STPSC8065D

■ 제품사양

장착형태 = Through Hole
패키지 = TO-220AC Maximum Continuous Forward Current = 8A Peak Reverse Repetitive Voltage = 650V
다이오드 구성 = Single Rectifier
타입 = Schottky Diode Diode
타입 = SiC Schottky
핀수 = 2 Maximum Forward Voltage Drop = 1.65V
칩당 요소 수 = 1 Diode Technology = SiC Schottky Peak Non-Repetitive Forward Surge Current = 200A The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phasesNo or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Operating Tj from -40 °C to 175 °C