■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STPSC10H12GY-TR
간략설명	STMicroelectronics 1200V 10A, SiC Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR

■ 제품사양

장착형태 = Surface Mount
패키지 = D2PAK Maximum Continuous Forward Current = 10A Peak Reverse Repetitive Voltage = 1200V
다이오드 구성 = Single Rectifier
타입 = Schottky Diode Diode
타입 = SiC Schottky
핀수 = 2 + Tab Maximum Forward Voltage Drop = 2.25V
칩당 요소 수 = 1 Diode Technology = SiC Schottky Peak Non-Repetitive Forward Surge Current = 71 A, 420 A The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phasesNo or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery PPAP capable Operating Temp. from -40 °C to 175 °C