■ 제품필수정보

제조사	Wolfspeed
제조사품명	C2M0160120D
간략설명	SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 19 A Maximum Drain Source Voltage = 1200 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 196 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 2.4V Maximum Power Dissipation = 125 W Transistor Configuration = Single Maximum Gate Source Voltage = -5 V, +20 V Length = 16.13mm
높이 = 21.1mm Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet?? C2M??; C3M??Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. Enhancement-mode N-channel SiC technology High Drain-Source breakdown voltages - up to 1200V Multiple devices are easy to parallel and simple to drive High speed switching with low on-resistance Latch-up resistant operation